Some Of The Essential Aspects You Must Know About Rowhammer
July 23, 2018
What is Rowhammer?
The DRAM cells are embedded in rows and are organized very near to each other to increase density. Again and again activating rows of memory for writing data leads to leakage in electrical charge of a cell with its neighboring cell. It can affect the random bit flips and can change the memory content. Repeatedly access of rows leads to “hammering” a row and is therefore known as Row Hammering.
The embedded data in each of cells in DRAM lived-in separate memory cell that is electrically incorporated with one capacitor and one transistor. The charge nature of capacitor decides whether DRAM cell embed 1 or 0 as a binary value. Numbers of DRAM memory cells are closely tight into combined circuits that arrange the cells for reading, writing as well as refreshing data.
Thus difficulty was often faced with RAM manufactured after 2010. More than 75% of RAM from the sample of 130 RAM modules from 3 manufacturers are susceptible. DDR4 ram is also susceptible with 8 out of 12 sampled module DRAMs which were causing bit flips and certain design in the DRAM rows leads to bit flips. The RAM modules manufactured after 2012 was being susceptible.